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| ? 2007-2013 microchip technology inc. ds22057b-page 1 mcp1826/mcp1826s features: 1000 ma output current capability input operating voltage range: 2.3v to 6.0v adjustable output voltage range: 0.8v to 5.0v (mcp1826 only) standard fixed output voltages: - 0.8v, 1.2v, 1.8v, 2.5v, 3.0v, 3.3v, 5.0v other fixed output voltage options available upon request low dropout voltage: 250 mv typical at 1000 ma typical output voltage tolerance: 0.5% stable with 1.0 f ceramic output capacitor fast response to load transients low supply current: 120 a (typ) low shutdown supply current: 0.1 a (typ) (mcp1826 only) fixed delay on power good output (mcp1826 only) short circuit current limiting and overtemperature protection to-263-5 (ddpak-5), to-220-5, sot-223-5 package options (mcp1826). to-263-3 (ddpak-3), to-220-3, sot-223-3 package options (mcp1826s). applications: high-speed driver chipset power networking backplane cards notebook computers network interface cards palmtop computers description: the mcp1826/mcp1826s is a 1000 ma low dropout (ldo) linear regulator that provides high-current and low-output voltages. the mcp1826 comes in a fixed or adjustable output voltage version, with an output voltage range of 0.8v to 5.0v. the 1000 ma output cur- rent capability, combined with the low-output voltage capability, make the mcp1826 a good choice for new sub-1.8v output voltage ldo applications that have high current demands. the mcp1826s is a 3-pin fixed voltage version. the mcp1826/mcp1826s is stable using ceramic output capacitors that inherently provide lower output noise and reduce the size and cost of the entire regulator solution. only 1 f of output capacitance is needed to stabilize the ldo. using cmos construction, the quiescent current consumed by the mcp1826/mcp1826s is typically less than 120 a over the entire input voltage range, making it attractive for portable computing applications that demand high-output current. the mcp1826 versions have a shutdown (shdn ) pin. when shut down, the quiescent current is reduced to less than 0.1 a. on the mcp1826 fixed output versions the scaled- down output voltage is internally monitored and a power good (pwrgd) output is provided when the output is within 92% of regulation (typical). the pwrgd delay is internally fixed at 200 s (typical). the overtemperature and short circuit current-limiting provide additional protection for the ldo during system fault conditions. 1000 ma, low-voltage, lo w quiescen t current ldo regulator downloaded from: http:///
mcp1826/mcp1826s ds22057b-page 2 ? 2007-2013 microchip technology inc. package types mcp1826 12 3 4 5 6 sot-223-5 pin fixed adjustable 1 shdn shdn 2v in v in 3 gnd (tab) gnd (tab) 4v out v out 5 pwrgd adj 6 gnd (tab) gnd (tab) 1 2 3 sot-223-3 4 mcp1826s pin 1v in 2 gnd (tab) 3v out 4 gnd (tab) fixed/adjustable ddpak-3 ddpak-5 to-220-3 to-220-5 12345 12345 123 123 downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 3 mcp1826/mcp1826s typical application mcp1826 adjustable output voltage mcp1826 fixed output voltage v out = 1.8v @ 1000 ma v in = 2.3v to 2.8v on off 1f 100 k ? 4.7 f c 1 c 2 r 1 shdn v in gnd v out pwrgd 20 k ? r 2 v out = 1.2v @ 1000 ma v in = 2.3v to 2.8v on off 1f 40 k ? 4.7 f c 1 c 2 r 1 shdn v in gnd v out v adj 1 1 downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 4 ? 2007-2013 microchip technology inc. functional block diagram C adjustable output ea + C v out pmos r f c f i sns overtemperature v ref comp 92% of v ref t delay v in driver w/limit and shdn gnd soft-start adj/sense undervoltage lockout v in reference shdn shdn shdn sensing (uvlo) downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 5 mcp1826/mcp1826s functional block diagram C fixed output (3-pin) ea + C v out pmos r f c f i sns overtemperature v ref comp 92% of v ref t delay v in driver w/limit and shdn gnd soft-start sense undervoltage lockout v in reference shdn shdn shdn sensing (uvlo) downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 6 ? 2007-2013 microchip technology inc. functional block diagram C fixed output (5-pin) ea + C v out pmos r f c f i sns overtemperature v ref comp 92% of v ref v in driver w/limit and shdn gnd soft-start sense undervoltage lockout v in reference shdn shdn shdn sensing (uvlo) pwrgd t delay downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 7 mcp1826/mcp1826s 1.0 electrical characteristics absolute maximum ratings ? v in ....................................................................................6.5v maximum voltage on any pin .. (gnd C 0.3v) to (v dd + 0.3)v maximum power dissipation......... internally-limited ( note 6 ) output short circuit duration ................................ continuous storage temperature .....................................-65c to +150c maximum junction temperature, t j ........................... +150c esd protection on all pins (hbm/mm) ??????????? ?? 4kv; ? 300v ? notice: stresses above those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this spec ification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. ac/dc characteristics electrical specifications: unless otherwise noted, v in = v out(max) + v dropout(max) , note 1 , v r =1.8v for adjustable output, i out = 1 ma, c in = c out = 4.7 f (x7r ceramic), t a = +25c. boldface type applies for junction temperatures, t j ( note 7 ) of -40c to +125c parameters sym. min. typ. max. units conditions input operating voltage v in 2.3 6.0 v note 1 input quiescent current i q 1 2 0 220 a i l = 0 ma, v out = 0.8v to 5.0v input quiescent current for shdn mode i shdn 0 . 1 3 a shdn = gnd maximum output current i out 1000 m a v in = 2.3v to 6.0v v r = 0.8v to 5.0v, note 1 line regulation ? v out / (v out x ? v in ) 0 . 0 5 0 . 20 %/v ( note 1 ) ?? v in ?? 6v load regulation ? v out /v out -1.0 0.5 1.0 %i out = 1 ma to 1000 ma, ( note 4 ) output short circuit current i out_sc 2 . 2ar load <0.1 ? , peak current adjust pin characteristics (adjustable output only) adjust pin reference voltage v adj 0.402 0.410 0.418 vv in = 2.3v to v in =6.0v, i out = 1 ma adjust pin leakage current i adj -10 0.01 +10 na v in = 6.0v, v adj =0vto6v adjust temperature coefficient tcv out 40 ppm/c note 3 fixed-output characteristics (fixed output only) voltage regulation v out v r - 2.5% v r 0.5% v r + 2.5% v note 2 note 1: the minimum v in must meet two conditions: v in ??? 2.3v and v in ???? v out(max) ??? v dropout(max). 2: v r is the nominal regulator output voltage for the fixed cases. v r = 1.2v, 1.8v, etc. v r is the desired set point output voltage for the adjustable cases. v r = v adj * ((r 1 /r 2 )+1). figure 4-1 . 3: tcv out = (v out-high C v out-low ) *10 6 / (v r * ? temperature). v out-high is the highest voltage measured over the temperature range. v out-low is the lowest voltage meas ured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty-c ycle pulse testing. load regulation is tested over a load range from 1 ma to the maximum specified output current. 5: dropout voltage is defined as the input-to-output voltage diff erential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of v in = v out(max) + v dropout(max) . 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., t a , t j , ? ja ). exceeding the maximum allowable power dissipation will cause the device operati ng junction temperature to exceed the maximum +150c rating. sustained junction temperatures above 150c can impact device reliability. 7: the junction temperature is approximated by soaking the dev ice under test at an ambient temperature equal to the desired junction temperature. the test ti me is small enough such that the rise in the junction temperature over the ambient temperature is not significant. downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 8 ? 2007-2013 microchip technology inc. dropout characteristics dropout voltage v dropout 250 400 mv note 5 , i out = 1000 ma, v in(min) =2.3v power good characteristics pwrgd input voltage operat- ing range v pwrgd_vin 1.0 6.0 v t a = +25c 1.2 6.0 t a = -40c to +125c for v in < 2.3v, i sink =100a pwrgd threshold voltage (referenced to v out ) v pwrgd_th %v out falling edge 89 92 95 v out < 2.5v fixed, v out = adj. 90 92 94 v out >= 2.5v fixed pwrgd threshold hysteresis v pwrgd_hys 1.0 2.0 3.0 %v out pwrgd output voltage low v pwrgd_l 0 . 2 0.4 vi pwrgd sink = 1.2 ma, adj = 0v pwrgd leakage p wrgd _ lk 1n a v pwrgd = v in = 6.0v pwrgd time delay t pg 125 s rising edge r pullup = 10 k ? detect threshold to pwrgd active time delay t vdet-pwrgd 200 s v out = v pwrgd_th + 20 mv to v pwrgd_th - 20 mv shutdown input logic high input v shdn-high 45 % v in v in = 2.3v to 6.0v logic low input v shdn-low 15 %v in v in = 2.3v to 6.0v shdn input leakage current shdn ilk -0.1 0.001 +0.1 a v in =6v, shdn =v in , shdn = gnd ac performance output delay from shdn t or 100 s shdn = gnd to v in v out = gnd to 95% v r output noise e n 2 . 0 v / ? hz i out = 200 ma, f = 1 khz, c out = 10 f (x7r ceramic), v out = 2.5v ac/dc characteristics (continued) electrical specifications: unless otherwise noted, v in = v out(max) + v dropout(max) , note 1 , v r =1.8v for adjustable output, i out = 1 ma, c in = c out = 4.7 f (x7r ceramic), t a = +25c. boldface type applies for junction temperatures, t j ( note 7 ) of -40c to +125c parameters sym. min. typ. max. units conditions note 1: the minimum v in must meet two conditions: v in ??? 2.3v and v in ???? v out(max) ??? v dropout(max). 2: v r is the nominal regulator output voltage for the fixed cases. v r = 1.2v, 1.8v, etc. v r is the desired set point output voltage for the adjustable cases. v r = v adj * ((r 1 /r 2 )+1). figure 4-1 . 3: tcv out = (v out-high C v out-low ) *10 6 / (v r * ? temperature). v out-high is the highest volt age measured over the temperature range. v out-low is the lowest voltage meas ured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty-c ycle pulse testing. load regulation is tested over a load range from 1 ma to the maximum specified output current. 5: dropout voltage is defined as the input-to-output voltage diff erential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of v in = v out(max) + v dropout(max) . 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., t a , t j , ? ja ). exceeding the maximum allowable power dissipation will cause the device operati ng junction temperature to exceed the maximum +150c rating. sustained junction temperatures above 150c can impact device reliability. 7: the junction temperature is approximated by soaking the dev ice under test at an ambient temperature equal to the desired junction temperature. the test ti me is small enough such that the rise in the junction temperature over the ambient temperature is not significant. downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 9 mcp1826/mcp1826s temperature specifications power supply ripple rejection ratio psrr 60 db f = 100 hz, c out = 4.7 f, i out = 100 a, v inac = 100 mv pk-pk, c in = 0 f thermal shutdown temperature t sd 1 5 0 ci out = 100 a, v out = 1.8v, v in = 2.8v thermal shutdown hysteresis ? t sd 1 0 c i out = 100 a, v out = 1.8v, v in = 2.8v parameters sym. min. typ. max. units conditions temperature ranges operating junction temperature range t j -40 +125 c steady state maximum junction temperature t j +150 c transient storage temperature range t a -65 +150 c thermal package resistances thermal resistance, 3l-ddpak ? ja 31.4 c/w 4-layer jc51 standard board ? jc 3 . 0 c / w thermal resistance, 3l-to-220 ? ja 29.4 c/w 4-layer jc51 standard board ? jc 2 . 0 c / w thermal resistance, 3l-sot-223 ? ja 62 c/w eia/jedec jesd51-751-7 4 layer board ? jc 1 5 . 0 c / w thermal resistance, 5l-ddpak ? ja 31.2 c/w 4-layer jc51 standard board ? jc 3 . 0 c / w thermal resistance, 5l-to-220 ? ja 29.3 c/w 4-layer jc51 standard board ? jc 2 . 0 c / w thermal resistance, 5l-sot-223 ? ja 62 c/w eia/jedec jesd51-751-7 4 layer board ? jc 1 5 . 0 c / w ac/dc characteristics (continued) electrical specifications: unless otherwise noted, v in = v out(max) + v dropout(max) , note 1 , v r =1.8v for adjustable output, i out = 1 ma, c in = c out = 4.7 f (x7r ceramic), t a = +25c. boldface type applies for junction temperatures, t j ( note 7 ) of -40c to +125c parameters sym. min. typ. max. units conditions note 1: the minimum v in must meet two conditions: v in ??? 2.3v and v in ???? v out(max) ??? v dropout(max). 2: v r is the nominal regulator output voltage for the fixed cases. v r = 1.2v, 1.8v, etc. v r is the desired set point output voltage for the adjustable cases. v r = v adj * ((r 1 /r 2 )+1). figure 4-1 . 3: tcv out = (v out-high C v out-low ) *10 6 / (v r * ? temperature). v out-high is the highest voltage measured over the temperature range. v out-low is the lowest voltage meas ured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty-c ycle pulse testing. load regulation is tested over a load range from 1 ma to the maximum specified output current. 5: dropout voltage is defined as the input-to-output voltage diff erential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of v in = v out(max) + v dropout(max) . 6: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., t a , t j , ? ja ). exceeding the maximum allowable power dissipation will cause the device operati ng junction temperature to exceed the maximum +150c rating. sustained junction temperatures above 150c can impact device reliability. 7: the junction temperature is approximated by soaking the dev ice under test at an ambient temperature equal to the desired junction temperature. the test ti me is small enough such that the rise in the junction temperature over the ambient temperature is not significant. downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 10 ? 2007-2013 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, c out = 4.7 f ceramic (x7r), c in = 4.7 f ceramic (x7r), i out = 1 ma, temperature = +25c, v in = v out + 0.6v, fixed output. figure 2-1: quiescent current vs. input voltage (adjustable version). figure 2-2: ground current vs. load current (adjustable version). figure 2-3: quiescent current vs. junction temperature (adjustable version). figure 2-4: line regulation vs. temperature (adjustable version). figure 2-5: load regulation vs. temperature (adjustable version). figure 2-6: adjust pin voltage vs. temperature (adjustable version). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 80 90 100 110 120 130 140 2 3 4 5 6 quiescent current ( a) input voltage (v) 130 c -45 c +25 c +90 c v out = 1.2v adj i out = 0 ma +130 c +25 c +90 c 0c 100 110 120 130 140 150 160 170 180 0 250 500 750 1000 load current (ma) ground current ( a) v in = 3.3v v out = 1.2v adj v in = 5.0v v in = 2.3v 85 90 95 100 105 110 115 120 125 130 135 140 -45 -20 5 30 55 80 105 130 quiescent current ( a) temperature (c) v in = 5.0v v in = 2.3v v in = 4.0v v out = 1.2v adj i out = 0 ma v in = 6.0v v in = 3.0v 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 -45 -20 5 30 55 80 105 130 temperature (c) line regulation (%/v) v out = 1.2v adj v in = 2.3v to 6.0v i out = 1 ma i out = 1000 ma i out = 100 ma i out = 250 ma i out = 50 ma -0.15 -0.10 -0.05 0.00 0.05 0.10 0.15 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) i out = 1.0 ma to 1000 ma v out = 5.0v v out = 3.3v v out = 0.8v v out = 1.8v 0.406 0.407 0.408 0.409 0.410 0.411 -45 -20 5 30 55 80 105 130 adjust pin voltage (v) temperature (c) v out = 1.2v i out = 1.0 ma v in = 6.0v v in = 2.3v v in = 5.0v downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 11 mcp1826/mcp1826s note: unless otherwise indicated, c out = 4.7 f ceramic (x7r), c in = 4.7 f ceramic (x7r), i out = 1 ma, temperature = +25c, v in = v out + 0.6v, fixed output. figure 2-7: dropout voltage vs. load current (adjustable version). figure 2-8: dropout voltage vs. temperature (adjustable version). figure 2-9: power good (pwrgd) time delay vs. temperature. figure 2-10: quiescent current vs. input voltage. figure 2-11: quiescent current vs. input voltage. figure 2-12: ground current vs. load current. 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 200 400 600 800 1000 load current (ma) dropout voltage (v) v out = 2.5v adj v out = 5.0v adj 0.19 0.22 0.25 0.28 0.31 0.34 -45 -20 5 30 55 80 105 130 temperature (c) dropout voltage (v) v out = 5.0v adj v out = 2.5v adj i out = 1.0 a 100 110 120 130 140 150 160 170 -45 -20 5 30 55 80 105 130 power good time delay (s) temperature (c) v out = 2.5v i out = 0 ma v in = 3.9v v in = 6.0v v in = 5.0v v in = 3.1v 90 100 110 120 130 140 150 23456 input voltage (v) quiescent current ( a) +130c v out = 0.8v i out = 0 ma -45c +90c +25c 0c 80 90 100 110 120 130 140 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 quiescent current ( a) input voltage (v) v out = 2.5v i out = 0 ma +130 c -45 c +25 c +90 c 0c 60 80 100 120 140 160 180 200 0 250 500 750 1000 load current (ma) ground current ( a) v in = 2.3v for v r =0.8v v in = 3.9v for v r =3.3v v out =0.8v v out =3.3v downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 12 ? 2007-2013 microchip technology inc. note: unless otherwise indicated, c out = 4.7 f ceramic (x7r), c in = 4.7 f ceramic (x7r), i out = 1 ma, temperature = +25c, v in = v out + 0.6v, fixed output. figure 2-13: quiescent current vs. temperature. figure 2-14: i shdn vs. temperature. figure 2-15: line regulation vs. temperature. figure 2-16: line regulation vs. temperature. figure 2-17: load regulation vs. temperature (v out < 2.5v fixed). figure 2-18: load regulation vs. temperature (v out ?? 2.5v fixed). 90 95 100 105 110 115 120 125 130 -45 -20 5 30 55 80 105 130 temperature (c) quiescent current ( a) v out = 0.8v v out = 2.5v i out = 0 ma 0.00 0.10 0.20 0.30 0.40 0.50 -45 -20 5 30 55 80 105 130 i shdn ( a) temperature (c) v in = 2.3v v in = 3.0v v in = 4.0v v r = 0.8v v in = 6.0v v in = 5.0v 0.00 0.02 0.04 0.06 0.08 0.10 -45 -20 5 30 55 80 105 130 temperature (c) line regulation (%/v) v out = 0.8v v in = 2.3v to 6.0v i out = 1 ma i out = 100 ma i out = 500ma i out = 1a i out = 50 ma 0.015 0.020 0.025 0.030 0.035 0.040 -45 -20 5 30 55 80 105 130 temperature (c) line regulation (%/v) i out = 1000 ma i out = 1 ma i out = 50 ma i out = 250 ma i out = 500 ma v r = 2.5v v in = 3.1 to 6.0v -0.30 -0.20 -0.10 0.00 0.10 0.20 0.30 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) v out = 0.8v v in = 2.3v i out = 1 ma to 1000 ma -0.40 -0.35 -0.30 -0.25 -0.20 -0.15 -0.10 -0.05 0.00 -45 -20 5 30 55 80 105 130 temperature (c) load regulation (%) v out = 2.5v v out = 5.0v i out = 1 ma to 1000 ma downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 13 mcp1826/mcp1826s note: unless otherwise indicated, c out = 4.7 f ceramic (x7r), c in = 4.7 f ceramic (x7r), i out = 1 ma, temperature = +25c, v in = v out + 0.6v, fixed output. figure 2-19: dropout voltage vs. load current. figure 2-20: dropout voltage vs. temperature. figure 2-21: short circuit current vs. input voltage. figure 2-22: output noise voltage density vs. frequency. figure 2-23: power supply ripple rejection (psrr) vs. frequency (adjustable). figure 2-24: power supply ripple rejection (psrr) vs. frequency. 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 200 400 600 800 1000 load current (ma) dropout voltage (v) v out = 5.0v v out = 2.5v 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 -45 -20 5 30 55 80 105 130 temperature (c) dropout voltage (v) i out = 1000 ma v out = 2.5v v out = 5.0v 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0123456 input voltage (v) short circuit current (a) v out = 0.8v 0.010 0.100 1.000 10.000 0.01 0.1 1 10 100 1000 noise ( v/ hz) frequency (khz) v r =0.8v, v in =2.3v v r =3.3v, v in =4.1v c out =1 f ceramic x7r c in =10 f ceramic i out =200 ma -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 frequency (khz) psrr (db) v r =1.2v adj c out =10 f ceramic x7r v in =3.1v c in =0 f i out =10 ma -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 frequency (khz) psrr (db) v r =3.3v fixed c out =22 f ceramic x7r v in =3.9v c in =0 f i out =10 ma downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 14 ? 2007-2013 microchip technology inc. note: unless otherwise indicated, c out = 4.7 f ceramic (x7r), c in = 4.7 f ceramic (x7r), i out = 1 ma, temperature = +25c, v in = v out + 0.6v, fixed output. figure 2-25: 2.5v (adj.) start-up from v in . figure 2-26: 2.5v (adj.) start-up from shutdown. figure 2-27: power good (pwrgd) timing. figure 2-28: dynamic line response. figure 2-29: dynamic load response (10 ma to 1000 ma). figure 2-30: dynamic load response (100 ma to 1000 ma). downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 15 mcp1826/mcp1826s 3.0 pin description the descriptions of the pins are listed in tab l e 3 - 1 . table 3-1: pin function table 3.1 shutdown control input (shdn ) the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at a logic-high level, the ldo output voltage is enabled. when the shdn input is pulled to a logic-low level, the ldo output voltage is disabled. when the shdn input is pulled low, the pwrgd output also goes low and the ldo enters a low quiescent current shutdown state where the typical quiescent current is 0.1 a. 3.2 input voltage supply (v in ) connect the unregulated or regulated input voltage source to v in . if the input voltage source is located several inches away from the ldo, or the input source is a battery, it is recommended that an input capacitor be used. a typical input capacitance value of 1 f to 10 f should be sufficient for most applications. 3.3 ground (gnd) connect the gnd pin of the ldo to a quiet circuit ground. this will help the ldo power supply rejection ratio and noise performance. the ground pin of the ldo only conducts the quiescent current of the ldo (typically 120 a), so a heavy trace is not required. for applications have switching or noisy inputs tie the gnd pin to the return of the output capacitor. ground planes help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients. 3.4 regulated output voltage (v out ) the v out pin is the regulated output voltage of the ldo. a minimum output capacitance of 1.0 f is required for ldo stability. the mcp1826/mcp1826s is stable with ceramic, tantalum and aluminum-electro- lytic capacitors. see section 4.3 output capacitor for output capacitor selection guidance. 3.5 power good output (pwrgd) the pwrgd output is an open-drain output used to indicate when the ldo output voltage is within 92% (typically) of its nominal regulation value. the pwrgd threshold has a typical hysteresis value of 2%. the pwrgd output is delayed by 200 s (typical) from the time the ldo output is within 92% + 3% (max hystere- sis) of the regulated output value on power-up. this delay time is internally fixed. 3.6 output voltage adjust input (adj) for adjustable applications, the output voltage is connected to the adj input through a resistor divider that sets the output voltage regulation value. this provides the user the capability to set the output voltage to any value they desire within the 0.8v to 5.0v range of the device. 3.7 exposed pad (ep) the ddpak and to-220 package have an exposed tab on the package. a heat sink may be mounted to the tab to aid in the removal of heat from the package during operation. the exposed tab is at the ground potential of the ldo. 3-pin fixed output 5-pin fixed output adjustable output name description 1 1 shdn shutdown control input (active-low) 122v in input voltage supply 2 3 3 gnd ground 344v out regulated output voltage 5 pwrgd power good output 5 adj voltage adjust/sense input exposed pad exposed pad exposed pad ep exposed pad of the package (ground potential) downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 16 ? 2007-2013 microchip technology inc. 4.0 device overview the mcp1826/mcp1826s is a high output current, low dropout (ldo) voltage regulator. the low dropout voltage of 300 mv typical at 1000 ma of current makes it ideal for battery-powered applications. unlike other high output current ldos, the mcp1826/mcp1826s only draws a maximum of 220 a of quiescent current. the mcp1826 has a shutdown control input and a power good output. 4.1 ldo output voltage the 5-pin mcp1826 ldo is available with either a fixed output voltage or an adjustable output voltage. the output voltage range is 0.8v to 5.0v for both versions. the 3-pin mcp1826s ldo is available as a fixed voltage device. 4.1.1 adjust input the adjustable version of the mcp1826 uses the adj pin (pin 5) to get the output voltage feedback for output voltage regulation. this allows the user to set the output voltage of the device with two external resistors. the nominal voltage for adj is 0.41v. figure 4-1 shows the adjustable version of the mcp1826. resistors r 1 and r 2 form the resistor divider network necessary to set the output voltage. with this configuration, the equation for setting v out is: equation 4-1: figure 4-1: typical adjustable output voltage application circuit. the allowable resistance value range for resistor r 2 is from 10 k ? to 200 k ? . solving the equation for r 1 yields the following equation: equation 4-2: 4.2 output current and current limiting the mcp1826/mcp1826s ldo is tested and ensured to supply a minimum of 1000 ma of output current. the mcp1826/mcp1826s has no minimum output load, so the output load current can go to 0 ma and the ldo will continue to regulate the output voltage to within tolerance. the mcp1826/mcp1826s also incorporates an output current limit. if the output voltage falls below 0.7v due to an overload condition (usually represents a shorted load condition), the output current is limited to 2.2a (typical). if the overload condition is a soft overload, the mcp1826/mcp1826s will supply higher load currents of up to 2.5a. the mcp1826/mcp1826s should not be operated in this condition continuously as it may result in failure of the device. however, this does allow for device usage in applications that have higher pulsed load currents having an average output current value of 1000 ma or less. output overload conditions may also result in an over- temperature shutdown of the device. if the junction temperature rises above 150c, the ldo will shut down the output voltage. see section 4.8 overtem- perature protection for more information on overtemperature shutdown. 4.3 output capacitor the mcp1826/mcp1826s requires a minimum output capacitance of 1 f for output voltage stability. ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. aluminum-electrolytic and tantalum capacitors can be used on the ldo output as well. the equivalent series resistance (esr) of the electrolytic output capacitor must be no greater than 1 ohm. the output capacitor should be located as close to the ldo output as is practical. ceramic materials x7r and x5r have low temperature coefficients and are well within the acceptable esr range required. a typical 1 f x7r 0805 capacitor has an esr of 50 milli-ohms. v out v adj r 1 r 2 + r 2 ------------------ ?? ?? = where: v out = ldo output voltage v adj =adj pin voltage (typically 0.41v) shdn gnd adj 2 1f v out 4.7 f v in on off r 1 r 2 c 1 c2 mcp1826-adj 1 3 4 5 r 1 r 2 v out v adj ? v adj -------------------------------- ?? ?? = where: v out = ldo output voltage v adj =adj pin voltage (typically 0.41v) downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 17 mcp1826/mcp1826s larger ldo output capacitors can be used with the mcp1826/mcp1826s to improve dynamic performance and power supply ripple rejection performance. a maximum of 22 f is recommended. aluminum-electrolytic capacitors are not recom- mended for low-temperature applications of ? -25c. 4.4 input capacitor low input source impedance is necessary for the ldo output to operate properly. when operating from batteries, or in applications with long lead length (> 10 inches) between the input source and the ldo, some input capacitance is recommended. a minimum of 1.0 f to 4.7 f is recommended for most applications. for applications that have output step load requirements, the input capacitance of the ldo is very important. the input capacitance provides the ldo with a good local low-impedance source to pull the transient currents from in order to respond quickly to the output load step. for good step response performance, the input capacitor should be of equivalent (or higher) value than the output capacitor. the capacitor should be placed as close to the input of the ldo, as is practical. larger input capacitors will also help reduce any high-frequency noise on the input and output of the ldo and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the ldo. 4.5 power good output (pwrgd) the pwrgd output is used to indicate when the output voltage of the ldo is within 92% (typical value, see section 1.0 electrical characteristics for minimum and maximum specifications) of its nominal regulation value. as the output voltage of the ldo rises, the pwrgd output will be held low until the output voltage has exceeded the power good threshold plus the hysteresis value. once this threshold has been exceeded, the power good time delay is started (shown as t pg in the electrical characteristics table). the power good time delay is fixed at 200 s (typical). after the time delay period, the pwrgd output will go high, indicating that the output voltage is stable and within regulation limits. if the output voltage of the ldo falls below the power good threshold, the power good output will transition low. the power good circuitry has a 170 s delay when detecting a falling output voltage, which helps to increase noise immunity of the power good output and avoid false triggering of the power good output during fast output transients. see figure 4-2 for power good timing characteristics. when the ldo is put into shutdown mode using the shdn input, the power good output is pulled low immediately, indicating that the output voltage will be out of regulation. the timing diagram for the power good output when using the shutdown input is shown in figure 4-3 . the power good output is an open-drain output that can be pulled up to any voltage that is equal to or less than the ldo input voltage. this output is capable of sinking 1.2 ma (v pwrgd < 0.4v maximum). figure 4-2: power good timing. figure 4-3: power good timing from shutdown. t pg t vdet_pwrgd v pwrgd_th v out pwrgd v ol v oh v in shdn v out 30 s 70 s t or pwrgd t pg downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 18 ? 2007-2013 microchip technology inc. 4.6 shutdown input (shdn ) the shdn input is an active-low input signal that turns the ldo on and off. the shdn threshold is a percentage of the input voltage. the typical value of this shutdown threshold is 30% of v in , with minimum and maximum limits over the entire operating temperature range of 45% and 15%, respectively. the shdn input will ignore low-going pulses (pulses meant to shut down the ldo) that are up to 400 ns in pulse width. if the shutdown input is pulled low for more than 400 ns, the ldo will enter shutdown mode. this small bit of filtering helps to reject any system noise spikes on the shutdown input signal. on the rising edge of the shdn input, the shutdown circuitry has a 30 s delay before allowing the ldo output to turn on. this delay helps to reject any false turn-on signals or noise on the shdn input signal. after the 30 s delay, the ldo output enters its soft-start period as it rises from 0v to its final regulation value. if the shdn input signal is pulled low during the 30 s delay period, the timer will be reset and the delay time will start over again on the next rising edge of the shdn input. the total time from the shdn input going high (turn-on) to the ldo output being in regulation is typically 100 s. see figure 4-4 for a timing diagram of the shdn input. figure 4-4: shutdown input timing diagram. 4.7 dropout voltage and undervoltage lockout dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below the nominal value that was measured with a v r + 0.5v differential applied. the mcp1826/ mcp1826s ldo has a very low dropout voltage specification of 300 mv (typical) at 1000 ma of output current. see section 1.0 electrical characteristics for maximum dropout voltage specifications. the mcp1826/mcp1826s ldo operates across an input voltage range of 2.3v to 6.0v and incorporates input undervoltage lockout (uvlo) circuitry that keeps the ldo output voltage off until the input voltage reaches a minimum of 2.00v (typical) on the rising edge of the input voltage. as the input voltage falls, the ldo output will remain on until the input voltage level reaches 1.82v (typical). since the mcp1826/mcp1826s ldo undervoltage lockout activates at 1.82v as the input voltage is falling, the dropout voltage specification does not apply for output voltages that are less than 1.8v. for high-current applications, voltage drops across the pcb traces must be taken into account. the trace resistances can cause significant voltage drops between the input voltage source and the ldo. for applications with input voltages near 2.3v, these pcb trace voltage drops can sometimes lower the input voltage enough to trigger a shutdown due to undervoltage lockout. 4.8 overtemperature protection the mcp1826/mcp1826s ldo has temperature- sensing circuitry to prevent the junction temperature from exceeding approximately 150 c. if the ldo junction temperature does reach 150 c, the ldo output will be turned off until the junction temperature cools to approximately 140 c, at which point the ldo output will automatically resume normal operation. if the internal power dissipation continues to be excessive, the device will again shut off. the junction temperature of the die is a function of power dissipa- tion, ambient temperature and package thermal resistance. see section 5.0 application circuits/ issues for more information on ldo power dissipation and junction temperature. shdn v out 30 s 70 s t or 400 ns (typ) downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 19 mcp1826/mcp1826s 5.0 application circuits/ issues 5.1 typical application the mcp1826/mcp1826s is used for applications that require high ldo output current and a power good output. figure 5-1: typical application circuit. 5.1.1 application conditions 5.2 power calculations 5.2.1 power dissipation the internal power dissipation within the mcp1826/ mcp1826s is a function of input voltage, output voltage, output current and quiescent current. equation 5-1 can be used to calculate the internal power dissipation for the ldo. equation 5-1: in addition to the ldo pass element power dissipation, there is power dissipation within the mcp1826/ mcp1826s as a result of quiescent or ground current. the power dissipation as a result of the ground current can be calculated using the following equation: equation 5-2: the total power dissipated within the mcp1826/ mcp1826s is the sum of the power dissipated in the ldo pass device and the p(i gnd ) term. because of the cmos construction, the typical i gnd for the mcp1826/ mcp1826s is 120 a. operating at a maximum v in of 3.465v results in a power dissipation of 0.12 milli-watts for a 2.5v output. for most applications, this is small compared to the ldo pass device power dissipation and can be neglected. the maximum continuous operating junction temperature specified for the mcp1826/mcp1826s is +125 c . to estimate the internal junction temperature of the mcp1826/mcp1826s, the total internal power dissipation is multiplied by the thermal resistance from junction-to-ambient (r ? ja ) of the device. the thermal resistance from junction to ambient for the to-220-5 package is estimated at 29.3 c/w. equation 5-3: package type = to-220-5 input voltage range = 3.3v 5% v in maximum = 3.465v v in minimum = 3.135v v dropout (max) = 0.400v v out (typical) = 2.5v i out = 1000 ma maximum p diss (typical) = 0.965w temperature rise = 28.27 c 10 f v out = 2.5v @ 1000 ma r 1 c 2 10 k ? pwrgd shdn gnd 2 4.7 f on off c 1 mcp1826-2.5 1 3 4 5 3.3v v in p ldo v in max ?? v out min ?? ? ?? i out max ?? ? = where: p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage p ignd ?? v in max ?? i vin ? = where: p i(gnd) = power dissipation due to the quiescent current of the ldo v in(max) = maximum input voltage i vin = current flowing in the v in pin with no ldo output current (ldo quiescent current) t jmax ?? p total r ? ja ? t amax ?? + = t j(max) = maximum continuous junction temperature p total = total device power dissipation r ? ja = thermal resistance from junction to ambient t a(max) = maximum ambient temperature downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 20 ? 2007-2013 microchip technology inc. the maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. equation 5-4 can be used to determine the package maximum internal power dissipation. equation 5-4: equation 5-5: equation 5-6: 5.3 typical application internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation is calculated in the following example. the power dissipation as a result of ground current is small enough to be neglected. 5.3.1 power dissipation example 5.3.1.1 device junction temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the thermal resistance from junction-to-ambient (r ? ja ) is derived from eia/jedec standards for measuring thermal resistance. the eia/jedec specification is jesd51. the standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. the actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. refer to an792, a method to determine how much power a sot23 can dissipate in an appli- cation (ds00792), for more information regarding this subject. p dmax ?? t jmax ?? t amax ?? ? ?? r ? ja --------------------------------------------------- = p d(max) = maximum device power dissipation t j(max) = maximum continuous junction temperature t a(max) = maximum ambient temperature r ? ja = thermal resistance from junction to ambient t jrise ?? p dmax ?? r ? ja ? = t j(rise) = rise in device junction temperature over the ambient temperature p d(max) = maximum device power dissipation r ? ja = thermal resistance from junction to ambient t j t jrise ?? t a + = t j = junction temperature t j(rise) = rise in device junction temperature over the ambient temperature t a = ambient temperature package package type = to-220-5 input voltage v in = 3.3v 5% ldo output voltage and current v out = 2.5v i out = 1000 ma maximum ambient temperature t a(max) = 60c internal power dissipation p ldo(max) =(v in(max) C v out(min) ) x i out(max) p ldo = ((3.3v x 1.05) C (2.5v x 0.975)) x 1000 ma p ldo = 1.028 watts t j(rise) =p total x r ? ja t j(rise) = 1.028 w x 29.3 c/w t j(rise) =30.12 c downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 21 mcp1826/mcp1826s 5.3.1.2 junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for this example, the worst-case junction temperature is estimated below: 5.3.1.3 maximum package power dissipation at 60c ambient temperature from this table, you can see the difference in maximum allowable power dissipation between the to-220-5 package and the ddpak-5 package. t j =t j(rise) + t a(max) t j = 30.12c + 60.0c t j = 90.12c to-220-5 (29.3 c/w r ? ja ): p d(max) = (125c C 60c) / 29.3c/w p d(max) = 2.218w ddpak-5 (31.2c/watt r ? ja ): p d(max) = (125c C 60c)/ 31.2c/w p d(max) = 2.083w downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 22 ? 2007-2013 microchip technology inc. 6.0 packaging information 6.1 package marking information example: legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 3-lead ddpak (mcp1826s) 3-lead to-220 (mcp1826s) 1 23 123 xxxxxxxxx xxxxxxxxx yywwnnn xxxxxxxxx xxxxxxxxx yywwnnn 123 mcp1826s 08eeb^^ 0730256 123 mcp1826s 12eab^^ 0730256 example: 3 e 3 e 3-lead sot-223 (mcp1826s) xxxxxxx xxxyyww nnn example: 1826s08 edb0730 256 downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 23 mcp1826/mcp1826s package marking information (continued) legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead ddpak (mcp1826) 5-lead to-220 (mcp1826) 12345 12345 xxxxxxxxx xxxxxxxxx yywwnnn xxxxxxxxx xxxxxxxxx yywwnnn 12345 mcp1826 10eet^^ 0730256 12345 mcp1826 08eat^^ 0730256 example: example: 3 e 3 e 5-lead sot-223 (mcp1826) xxxxxxx xxxyyww nnn example: 1826-08 edc0730 256 downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 24 ? 2007-2013 microchip technology inc. ! 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= 9. 8 (< = <( $$3 1 8 ** = *(( ;8 7 = * ; 1"" = (( & 7 ! a = & 7 # 3 * = (< 8 $8 8 ? = ( , " , # 8 $ ? = ( 8 $ 1"" = ( 8 $>$ ; ( e q d d1 h1 a a1 a2 c n e e1 b 1 2 3 l chamferoptional p / !*<, downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 34 ? 2007-2013 microchip technology inc. notes: downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 35 mcp1826/mcp1826s appendix a: revision history revision b (february 2013) the following is the list of modifications: updated the value of v dropout (max) in section 5.1 typical application . revision a (august 2007) original release of this document. downloaded from: http:/// mcp1826/mcp1826s ds22057b-page 36 ? 2007-2013 microchip technology inc. product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: mcp1826: 1000 ma low dropout regulator mcp1826t: 1000 ma low dropout regulator tape and reel mcp1826s: 1000 ma low dropout regulator mcp1826st: 1000 ma low dropout regulator tape and reel output voltage *: 08 = 0.8v standard 12 = 1.2v standard 18 = 1.8v standard 25 = 2.5v standard 30 = 3.0v standard 33 = 3.3v standard 50 = 5.0v standard adj = adjustable output voltage ** (mcp1826 only) *contact factory for other output voltage options ** when adj is used, the extra feature code and tolerance columns do not apply. refer to examples. extra feature code: 0 = fixed tolerance: 2 = 2.0% (standard) temperature: e= -40 ? c to +125 ? c package type: ab = plastic transistor outline, to-220, 3-lead at = plastic transistor outline, to-220, 5-lead db = plastic transistor outline, sot-223, 3-lead dc = plastic transistor outline, sot-223, 5-lead eb = plastic, ddpak, 3-lead et = plastic, ddpak, 5-lead note: adj (adjustable) only available in 5-lead version. part no. x xx output feature code device voltage x tolerance x/ tem p. xx package examples: a) mcp1826-0802e/xx: 0.8v ldo regulator b) mcp1826-1002e/xx: 1.0v ldo regulator c) mcp1826-1202e/xx: 1.2v ldo regulator d) mcp1826-1802e/xx 1.8v ldo regulator e) mcp1826-2502exx: 25v ldo regulator f) mcp1826-3002e/xx: 3.0v ldo regulator g) mcp1826-3302e/xx 3.3v ldo regulator h) mcp1826-5002e/xx: 5.0v ldo regulator i) mcp1826-adje/xx: adj ldo regulator a) mcp1826s-0802e/xx:0.8v ldo regulator b) mcp1826s-1002e/xx:1.0v ldo regulator c) mcp1826s-1202e/xx 1.2v ldo regulator d) mcp1826s-1802e/xx 1.8v ldo regulator e) mcp1826s-2502e/xx 2.5v ldo regulator f) mcp1826s-2502e/xx 3.0v ldo regulator g) mcp1826s-3302e/xx 3.3v ldo regulator h) mcp1826s-5002e/xx 5.0v ldo regulator xx = ab for 3ld to-220 package = at for 5ld to-220 package = db for 3ld sot-223 package = dc for 5ld sot-223 package = eb for 3ld ddpak package = et for 5ld ddpak package downloaded from: http:/// ? 2007-2013 microchip technology inc. ds22057b-page 37 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2007-2013, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620769850 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the companys quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == downloaded from: http:/// ds22057b-page 38 ? 2007-2013 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://www.microchip.com/ support web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 cleveland independence, oh tel: 216-447-0464 fax: 216-447-0643 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 indianapolis noblesville, in tel: 317-773-8323 fax: 317-773-5453 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8569-7000 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - chongqing tel: 86-23-8980-9588 fax: 86-23-8980-9500 china - hangzhou tel: 86-571-2819-3187 fax: 86-571-2819-3189 china - hong kong sar tel: 852-2943-5100 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8864-2200 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-3090-4444 fax: 91-80-3090-4123 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - osaka tel: 81-6-6152-7160 fax: 81-6-6152-9310 japan - tokyo tel: 81-3-6880- 3770 fax: 81-3-6880-3771 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-5778-366 fax: 886-3-5770-955 taiwan - kaohsiung tel: 886-7-213-7828 fax: 886-7-330-9305 taiwan - taipei tel: 886-2-2508-8600 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 worldwide sales and service 11/29/12 downloaded from: http:/// |
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